New Floating Gate Memory with Excellent Retention Characteristics
نویسندگان
چکیده
منابع مشابه
Radiation Effects on Floating-Gate Memory Cells
We have addressed the problem of threshold voltage ( TH) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low TH tails appear in TH distributions, growing with ion linear energy transfer (LET) and fluence. In particular, high LET ions, such as iodine used in this paper, can produce a bit flip. Since...
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ژورنال
عنوان ژورنال: Advanced Electronic Materials
سال: 2019
ISSN: 2199-160X,2199-160X
DOI: 10.1002/aelm.201800726